IRFS9N60ATRRPBF Vishay, IRFS9N60ATRRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFS9N60ATRRPBF
• Description: MOSFET N-CH 600V 9.2A D2PAK
• Manufacturer: Vishay

Specifications of IRFS9N60ATRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRFS9N60A, SiHFS9N60A
Vishay Siliconix
www.vishay.com
4
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
2400
2000
1600
1200
800
400
20
16
12
0
8
4
0
1
0
I =
D
9.2A
iss
oss
V
rss
DS
10
Q , Total Gate Charge (nC)
V
C
C
C
G
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
10
= 0V,
= C
= C
= C
20
gs
gd
ds
+ C
+ C
gd
gd
f = 1MHz
V
V
V
FOR TEST CIRCUIT
DS
DS
DS
30
, C
SEE FIGURE
100
= 480V
= 300V
= 120V
ds
SHORTED
40
13
1000
50
A
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
10
1000
1
100
0.2
0.1
10
1
Fig. 8 - Maximum Safe Operating Area
10
T
T
Single Pulse
C
J
V
= 25 C
= 150 C
T = 150 C
SD
J
OPERATION IN THIS AREA LIMITED
V
0.5
DS
,Source-to-Drain Voltage (V)
°
°
, Drain-to-Source Voltage (V)
°
100
BY R
0.7
S10-2433-Rev. B, 25-Oct-10
DS(on)
T = 25 C
J
Document Number: 91287
10us
100us
1ms
10ms
1000
°
1.0
V
GS
= 0 V
1.2
10000