IRLI520G Vishay, IRLI520G Datasheet
IRLI520G
Specifications of IRLI520G
Available stocks
Related parts for IRLI520G
IRLI520G Summary of contents
Page 1
... TO-220 FULLPAK IRLI520GPbF SiHLI520G-E3 IRLI520G SiHLI520G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 7.2 A (see fig. 12 ≤ 175 ° IRLI520G, SiHLI520G Vishay Siliconix ( RMS Specified and device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 7 5 0.24 E ...
Page 2
... IRLI520G, SiHLI520G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
Page 3
... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 90397 S-82994-Rev. A, 12-Jan- °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C IRLI520G, SiHLI520G Vishay Siliconix www.vishay.com 3 ...
Page 4
... IRLI520G, SiHLI520G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90397 S-82994-Rev. A, 12-Jan-09 ...
Page 5
... Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 90397 S-82994-Rev. A, 12-Jan-09 IRLI520G, SiHLI520G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...
Page 6
... IRLI520G, SiHLI520G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 90397 ...
Page 7
... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig.14 - For N-Channel IRLI520G, SiHLI520G Vishay Siliconix + + www.vishay.com 7 ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...