IRF9Z24 Vishay, IRF9Z24 Datasheet - Page 5

• Manufacturer Part Number: IRF9Z24
• Description: MOSFET P-CH 60V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z24

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24

Document Number: 91090
S09-0015-Rev. A, 19-Jan-09
91090_09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
15
12
to obtain
9
6
3
0
25
AS
91090_11
R
- 10 V
G
10
50
0.1
10
-2
V
1
T
10
DS
C
, Case Temperature (°C)
-5
D = 0.50
0.2
0.1
0.05
0.02
0.01
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
100
AS
D.U.T
0.01 Ω
L
10
125
-4
Single Pulse
(Thermal Response)
150
175
+
-
10
V
t
1
-3
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
IRF9Z24, SiHF9Z24
DS
t
r
t
p
1
j
= P
P
D.U.T.
DM
DM
R
Vishay Siliconix
D
x Z
t
d(off)
t
V
1
1
thJC
/t
DS
2
t
+ T
2
t
f
+
-
C
10
www.vishay.com
V
V
DD
DD
5