IRLI620G Vishay, IRLI620G Datasheet
IRLI620G
Specifications of IRLI620G
Available stocks
Related parts for IRLI620G
IRLI620G Summary of contents
Page 1
... Min. Typ. –––– –––– –––– –––– 9.1235 IRLI620G V = 200V DSS R = 0.80 DS(on 4.0A D Units A W W/°C V ...
Page 2
... IRLI620G Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
Page 3
... A 0.1 0.1 10 100 V Fig 2. Typical Output Characteristics, 2 5.2A D 2.0 1.5 1.0 0.5 A 0.0 4.5 5.0 -60 - Junction Temperature (°C) Fig 4. Normalized On-Resistance IRLI620G VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V 2.25V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 150 5.0V ...
Page 4
... IRLI620G 2000 1MHz iss rss oss ds gd 1500 C iss C oss 1000 C 500 rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150° 25° 0.1 0.3 0.6 0 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6. Typical Gate Charge Vs. ...
Page 5
... Fig 9. Maximum Drain Current Vs. Case Temperature 0 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit A 125 150 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRLI620G D.U. 5.0 V µ 0 ...
Page 6
... IRLI620G 5.0V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 5.0V Fig 13a. Basic Gate Charge Waveform 150 TOP 125 BOTTOM 4.0A 100 50V 100 Starting T , Juntion Temperature (°C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 13b. Gate Charge Test Circuit ...
Page 7
... Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations D.U.T Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLI620G ...
Page 8
... IRLI620G Package Outline TO-220 Full-Pak Part Marking Information TO-220 Full-Pak WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K& ...