IRFBC40ASPBF Vishay, IRFBC40ASPBF Datasheet - Page 2

• Manufacturer Part Number: IRFBC40ASPBF
• Description: MOSFET N-CH 600V 6.2A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC40ASPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1036pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBC40ASPBF

IRFBC40AS, SiHFBC40AS
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
d. Uses IRHFBC40A/SiHFBC40A data and test conditions.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance Effective
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
OSS
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
C
R
V
oss
t
t
C
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
DS
oss
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
V
GS
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= 10 V
= 10 V
= 0 V
= 480 V, V
= 25 °C, I
V
V
V
R
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DD
DS
DS
GS
g
DS
oss
-
-
= 9.1 , R
= 300 V, I
F
= 600 V, V
= V
= 0 V, I
V
= 50 V, I
= 6.2 A, dI/dt = 100 A/μs
V
see fig. 10
while V
V
GS
DS
V
S
V
GS
GS
I
GS
DS
D
DS
= 6.2 A, V
= ± 30 V
V
= 25 V,
, I
= 6.2 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
= 480 V, f = 1.0 MHz
DS
= 1.0 V, f = 1.0 MHz
D
D
DS
D
= 250 μA
D
D
= 250 μA
= 0 V to 480 V
I
GS
D
= 3.7 A
= 47
= 6.2 A,
is rising fom 0 to 80 % V
b
= 3.7 A
D
= 0 V
= 1 mA
GS
J
DS
= 125 °C
G
= 0 V
= 480 V,
b
d
MAX.
b
b
D
S
1.0
c
40
b
MIN.
600
2.0
3.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
S10-2433-Rev. B, 25-Oct-10
.
Document Number: 91113
TYP.
1036
1487
0.66
136
431
7.0
1.8
36
48
13
23
31
18
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
250
647
4.0
1.2
6.2
1.5
2.8
S
25
42
10
20
25
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
μC
nA
μA
pF
ns
ns

S
A
V
V
V