SUM110P08-11L-E3 Vishay, SUM110P08-11L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110P08-11L-E3
• Description: MOSFET P-CH 80V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM110P08-11L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 10850pF @ 40V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 50 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0112 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23.5 A
• Power Dissipation: 13600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -80V
• On Resistance Rds(on): 14.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0112Ohm
• Drain-source On-volt: 80V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -50C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P08-11L-E3; SUM110P08-11L-E3TR

SUM110P08-11L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
400
350
300
250
200
150
100
1.0
0.8
0.6
0.4
0.2
0.0
50
100
0
10
- 50 - 25
1
25
0
I
D
Source-Drain Diode Forward Voltage
= 1mA
Power Derating, Junction-to-Case
50
T
0
J
0.3
= 150 °C
Threshold Voltage
75
25
T
V
50
J
SD
100
- (°C)
T
0.6
C
- (V)
75
125
100
25 °C
0.9
125
150
150
New Product
175
175
1.2
1000.0
100.0
6000
5000
4000
3000
2000
1000
10.0
0.06
0.05
0.04
0.03
0.02
0.01
1.0
0.1
0.0001
0
0
Single Pulse Power, Junction-to-Case (T
0.1
0
* V
On-Resistance vs. Gate-to-Source Voltage
Limited by r
I
GS
D
= 20 A
> minimum V
V
2
DS
0.001
DS(on)
- Drain-to-Source Voltage (V)
25 °C
Safe Operating Area
1.0
*
Single Pulse
T c = 25 °C
GS
4
V
Time (s)
at which r
GS
0.01
S-72194-Rev. B, 22-Oct-07
Document Number: 73471
- (V)
150 °C
6
DS(on)
10.0
0.10
100 ms, DC
is specified
10 ms
8
100
10
C
1 ms
µs
= 25 °C)
µs
100.0
10
1