SUM90P10-19L-E3 Vishay, SUM90P10-19L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM90P10-19L-E3
• Description: MOSFET P-CH 100V 90A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM90P10-19L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 326nC @ 10V
• Input Capacitance (ciss) @ Vds: 11100pF @ 50V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 50 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17.2 A
• Power Dissipation: 13600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -90A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.019Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -50C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM90P10-19L-E3; SUM90P10-19L-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73474
S09-0659-Rev. E, 20-Apr-09
0.030
0.020
0.010
0.000
10.0
180
150
120
8.0
6.0
4.0
2.0
0.0
90
60
30
0
0.0
0
0
V
I
D
GS
40.0
= - 90 A
20
On-Resistance vs. Drain Current
= 10 V thru 4 V
V
DS
Q
1
V
V
Output Characteristics
g
DS
GS
- Drain-to-Source Voltage (V)
I
80.0
- Total Gate Charge (nC)
D
40
= 50 V
- Drain Current (A)
= 4.5 V
Gate Charge
120.0
60
2
V
DS
V
160.0
GS
= 80 V
80
= 10 V
3
200.0
100
3 V
240.0
120
4
12 000
15 000
9000
6000
3000
2.5
2.1
1.7
1.3
0.9
0.5
40
30
20
10
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
V
GS
I
D
20
C
= 10 V
T
V
= 20 A
T
0
rss
C
1.0
GS
J
Transfer Characteristics
= 125 °C
- Junction Temperature (°C)
V
- Gate-to-Source Voltage (V)
DS
25
- Drain-to-Source (V)
Capacitance
40
SUM90P10-19L
50
2.0
C
Vishay Siliconix
iss
25 °C
C
75
oss
60
100
www.vishay.com
3.0
125
80
- 55 °C
150
100
175
4.0
3