IRFBF20 Vishay, IRFBF20 Datasheet - Page 2
![MOSFET N-CH 900V 1.7A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFBF20
Manufacturer Part Number
IRFBF20
Description
MOSFET N-CH 900V 1.7A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRFBF20.pdf
(8 pages)
Specifications of IRFBF20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
490pF @ 25V
Power - Max
54W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBF20
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBF20L
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFBF20PBF
Manufacturer:
PH
Quantity:
3 518
Part Number:
IRFBF20PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFBF20S
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFBF20SPBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 958
Part Number:
IRFBF20SPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFBF20, SiHFBF20
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
R
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
thCS
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
V
GS
GS
R
J
DS
T
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C, I
J
Reference to 25 °C, I
= 10 V
= 10 V
= 18 Ω, R
= 25 °C, I
= 720 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
TEST CONDITIONS
0.50
DS
DS
DS
GS
-
-
= 900 V, V
= 450 V, I
= V
= 100 V, I
= 0 V, I
V
F
V
V
GS
D
= 1.7 A, dI/dt = 100 A/μs
DS
S
GS
I
GS
GS
D
= 280 Ω, see fig. 10
= 1.7 A, V
= ± 20 V
, I
= 25 V,
= 1.7 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
= 250 µA
D
= 250 µA
D
I
GS
D
= 1.7 A,
= 1.0 A
= 1.0 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
G
= 0 V
= 360 V,
b
MAX.
D
S
b
b
D
S
2.3
b
62
-
MIN.
0.60
900
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91120
S-81262-Rev. A, 07-Jul-08
TYP.
0.85
490
350
1.1
8.0
4.5
7.5
55
18
21
56
32
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
S
100
500
530
4.0
8.0
4.7
1.7
6.8
1.5
1.3
38
21
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
nC
pF
ns
ns
V
V
Ω
S
A
V