IRFBC40A Vishay, IRFBC40A Datasheet - Page 5

• Manufacturer Part Number: IRFBC40A
• Description: MOSFET N-CH 600V 6.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBC40A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1036pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFBC40A

Document Number: 91112
S11-0515-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Maximum Drain Current vs. Case Temperature
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.01
0
0.1
10
1
0.00001
25
D = 0.50
0.02
0.20
0.10
0.05
0.01
50
T C , Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
This datasheet is subject to change without notice.
125
t 1 , Rectangular Pulse Duration (s)
0.001
150
0.01
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IRFBC40A, SiHFBC40A
G
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
Notes:
10 V
V
GS
t
d(on)
V
0.1
DS
t
P DM
r
t 1
D.U.T.
t 2
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R
Vishay Siliconix
D
t
d(off)
t
1
f
+
-
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V
DD
5