IRFI9Z24G Vishay, IRFI9Z24G Datasheet - Page 4

• Manufacturer Part Number: IRFI9Z24G
• Description: MOSFET P-CH 60V 8.5A TO220FP
• Manufacturer: Vishay

Specifications of IRFI9Z24G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 37W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.28 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.5 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFI9Z24G

IRFI9Z24G, SiHFI9Z24G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
Document Number: 91171
4
S09-0062-Rev. A, 02-Feb-09