SIHP18N50C-E3 Vishay, SIHP18N50C-E3 Datasheet
SIHP18N50C-E3
Specifications of SIHP18N50C-E3
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SIHP18N50C-E3 Summary of contents
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... G S N-Channel MOSFET = 25 °C, unless otherwise noted) C SYMBOL ° 100 °C C TO-220AB TO-220AB dV/ for 150 °C. This datasheet is subject to change without notice. SiHP18N50C Vishay Siliconix TO-220AB SiHP18N50C-E3 LIMIT UNIT V 500 ± 1.8 W/°C E 361 223 V/ 150 J stg °C 300 www ...
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... SiHP18N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance a Forward Transconductance Dynamic Input Capacitance ...
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... V 0. 150 ° 150 °C J 2.5 2 1 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. SiHP18N50C Vishay Siliconix T = 150 ° ° Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 100 120 140 160 T Junction Temperature (° www ...
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... SiHP18N50C Vishay Siliconix MHz iss rss oss 100 V Drain-to-Source Voltage ( Fig Typical Capacitance vs. Drain-to-Source Voltage 400 250 100 Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage Fig Maximum Drain Current vs. Case Temperature www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Pulse Time ( Fig. 12b - Unclamped Inductive Waveforms Fig. 13a - Basic Gate Charge Waveform + This datasheet is subject to change without notice. SiHP18N50C Vishay Siliconix 0 Charge Current regulator Same type as D.U.T. 50 kΩ ...
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... SiHP18N50C Vishay Siliconix D.U. Driver gate drive D.U.T. l Reverse recovery current D.U.T. V Re-applied voltage Inductor current Note a. V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...