IRF540 Vishay, IRF540 Datasheet

IRF540

Manufacturer Part Number

IRF540

Description

MOSFET N-CH 100V 28A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRF540.pdf (8 pages)

2.IRF540.pdf (6 pages)

3.IRF540.pdf (9 pages)

Specifications of IRF540

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

77 mOhm @ 17A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

28A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

72nC @ 10V

Input Capacitance (ciss) @ Vds

1700pF @ 25V

Power - Max

150W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.077 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

28 A

Power Dissipation

150 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF540
IRF540IR

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Current page: 1 of 8
Download datasheet (2Mb)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91021

S-81240-Rev. A, 16-Jun-08

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

≤ 28 A, dI/dt ≤ 170 A/µs, V

= 25 V, starting T

(Ω)

TO-220

= 25 °C, L = 440 µH, R

≤ V

= 10 V

, T

Single

N-Channel MOSFET

≤ 175 °C.

100

= 25 Ω, I

Power MOSFET

0.077

= 25 °C, unless otherwise noted

6-32 or M3 screw

at 10 V

= 28 A (see fig. 12).

for 10 s

= 25 °C

TO-220

IRF540PbF

SiHF540-E3

IRF540

SiHF540

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

SYMBOL

dV/dt

, T

device

stg

design,

- 55 to + 175

IRF540, SiHF540

LIMIT

300

± 20

100

110

230

150

1.0

5.5

1.1

low

Vishay Siliconix

on-resistance

www.vishay.com

lbf · in

UNIT

W/°C

N · m

V/ns

RoHS*

COMPLIANT

°C

Available

and

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