IRFBG30 Vishay, IRFBG30 Datasheet - Page 7
![MOSFET N-CH 1000V 3.1A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFBG30
Manufacturer Part Number
IRFBG30
Description
MOSFET N-CH 1000V 3.1A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRFBG30PBF.pdf
(8 pages)
Specifications of IRFBG30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
980pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
3.1A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBG30
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBG30
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFBG30
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFBG30PBF
Manufacturer:
ABRACON
Quantity:
30 000
Part Number:
IRFBG30PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91124.
Document Number: 91124
S11-0517-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Rever e
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
This datasheet is subject to change without notice.
= 5 V for logic level device
P.W.
D
D
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Fig. 14 - For N-Channel
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
• dV/dt controlled by R
• Driver ame type a D.U.T.
• I
• D.U.T. - device under te t
Diode recovery
current
D
controlled by duty factor “D”
Circuit layout con ideration
dV/dt
• Low tray inductance
•
• Low leakage inductance
current tran former
dI/dt
round plane
D =
-
g
Period
P.W.
+
IRFBG30, SiHFBG30
V
I
V
DD
D
= 10 V
+
-
V
DD
a
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
7