IRFB11N50A Vishay, IRFB11N50A Datasheet - Page 4

• Manufacturer Part Number: IRFB11N50A
• Description: MOSFET N-CH 500V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB11N50A

IRFB11N5OA
4
2 4 0 0
2 0 0 0
1 6 0 0
1 2 0 0
8 0 0
4 0 0
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
C
C
C
is s
V
o s s
rs s
V
T = 150 C
D S
SD
J
Forward Voltage
V
C
C
C
0.4
, D rain-to-S ource V oltage (V )
,Source-to-Drain Voltage (V)
G S
is s
rss
o s s
1 0
= 0 V ,
= C
= C
= C
°
g s
g d
d s
+ C
+ C
0.8
T = 25 C
J
g d
g d
f = 1 M H z
, C
°
1 0 0
d s
1.2
S H O R T E D
V
GS
= 0 V
1 0 0 0
1.6
A
1000
100
0.1
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
10
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
6.6A
11A
Gate-to-Source Voltage
V
DS
°
10
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
100
20
BY R
DS(on)
V
V
V
10us
100us
1ms
10ms
DS
DS
DS
FOR TEST CIRCUIT
30
SEE FIGURE
1000
www.irf.com
= 400V
= 250V
= 100V
40
13
10000
50