SUM85N15-19-E3 Vishay, SUM85N15-19-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM85N15-19-E3
• Description: MOSFET N-CH 150V 85A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM85N15-19-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4750pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 3.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM85N15-19-E3TR

Document Number: 71703
S-32523—Rev. B, 08-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
7000
6000
5000
4000
3000
2000
1000
180
150
120
180
150
120
90
60
30
90
60
30
0
0
0
0
0
0
20
25
C
2
V
V
DS
rss
DS
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
I
Transconductance
D
40
50
− Drain Current (A)
Capacitance
4
60
C
75
C
oss
V
iss
GS
6
= 10 thru 7 V
100
80
T
C
6 V
5 V
= −55_C
8
100
125
125_C
25_C
4 V
120
150
10
0.04
0.03
0.02
0.01
0.00
180
150
120
90
60
30
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 85 A
1
20
25
On-Resistance vs. Drain Current
= 75 V
V
V
GS
GS
Q
Transfer Characteristics
g
2
= 10 V
− Gate-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
40
50
T
− Drain Current (A)
C
Gate Charge
= 125_C
25_C
3
Vishay Siliconix
SUM85N15-19
60
75
4
100
80
5
www.vishay.com
−55_C
100
125
6
120
150
7
3