IRFPC60PBF Vishay, IRFPC60PBF Datasheet - Page 2
![MOSFET N-CH 600V 16A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFPC60PBF
Manufacturer Part Number
IRFPC60PBF
Description
MOSFET N-CH 600V 16A TO-247AC
Manufacturer
Vishay
Datasheet
1.IRFPC60PBF.pdf
(8 pages)
Specifications of IRFPC60PBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 9.6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
16A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFPC60PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFPC60PBF
Manufacturer:
NXP
Quantity:
40 000
Part Number:
IRFPC60PBF
Manufacturer:
IR
Quantity:
20 000
IRFPC60, SiHFPC60
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
R
R
R
t
t
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
SM
thCS
thJC
I
t
thJA
t
DS
oss
t
SD
on
rss
iss
gd
S
rr
fs
gs
r
D
f
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
GS
GS
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
T
Reference to 25 °C, I
= 10 V
= 10 V
J
= 480 V, V
= 25 °C, I
TYP.
0.24
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
R
T
DS
DS
DD
GS
DS
-
-
g
J
dI/dt = 100 A/μs
= 25 °C, I
= 4.5 Ω, R
= 600 V, V
= V
= 50 V, I
= 300 V, I
= 0 V, I
V
V
see fig. 10
GS
V
DS
S
GS
GS
I
GS
D
= 16 A, V
= ± 20 V
, I
= 25 V,
= 16 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
F
= 250 μA
= 250 μA
D
I
D
GS
= 9.6 A
D
= 16 A,
= 18 Ω
= 16 A,
b
= 9.6 A
D
= 0 V
GS
= 1 mA
J
b
DS
G
G
= 125 °C
= 0 V
b
= 360 V,
b
MAX.
D
S
0.45
b
D
S
40
b
-
MIN.
600
2.0
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0442-Rev. B, 14-Mar-11
www.vishay.com/doc?91000
Document Number: 91245
TYP.
3900
830
440
110
610
5.0
6.6
98
19
54
56
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.40
100
500
210
110
920
4.0
1.8
9.9
26
16
64
S
-
-
-
-
-
-
-
-
-
-
-
-
and L
mV/°C
UNIT
D
nC
nH
μC
)
nA
μA
pF
ns
ns
Ω
S
A
V
V
V