IRLL110 Vishay, IRLL110 Datasheet - Page 2

• Manufacturer Part Number: IRLL110
• Description: MOSFET N-CH 100V 1.5A SOT223
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRLL110

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 540 mOhm @ 900mA, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.54Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±10V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLL110

IRLL110, SiHLL110
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
ΔV
R
V
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
GS
V
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
= 5.0 V
= 4.0 V
= 5.0 V
J
Reference to 25 °C, I
= 25 °C, I
= 80 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
R
TYP.
TEST CONDITIONS
DS
DS
DS
GS
DD
g
-
-
= 12 Ω, R
F
= 100 V, V
= 25 V, I
= V
= 0 V, I
= 50 V, I
V
= 5.6 A, dI/dt = 100 A/μs
V
V
GS
DS
S
GS
GS
GS
I
= 1.5 A, V
D
= ± 10 V
= 25 V,
, I
= 0 V, T
= 0 V,
= 5.6 A, V
see fig. 6 and 13
D
D
D
D
D
= 250 μA
I
= 250 μA
I
D
= 0.90 A
GS
D
= 5.6 A,
= 8.4 Ω
= 0.90 A
= 0.75 A
D
= 0 V
J
GS
= 1 mA
= 125 °C
DS
G
G
= 0 V
= 80 V,
b
MAX.
b
D
S
b
D
S
60
40
b
MIN.
0.57
100
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1257-Rev. C, 31-May-10
Document Number: 91320
TYP.
0.12
0.50
250
110
9.3
4.0
6.0
80
15
47
16
18
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.54
0.76
0.65
250
130
2.0
6.1
2.6
3.3
1.5
2.5
S
25
12
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V