IRFI9640G Vishay, IRFI9640G Datasheet - Page 6

• Manufacturer Part Number: IRFI9640G
• Description: MOSFET P-CH 200V 6.1A TO220FP
• Manufacturer: Vishay

Specifications of IRFI9640G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFI9640G

IRFI9610G, SiHFI9610G
Vishay Siliconix
www.vishay.com
6
- 10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
240
200
160
120
80
40
0
25
Starting T J , Junction Temperature (°C)
50
75
100
TOP
BOTTOM
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
-2.0A
-1.3A
-0.9A
I D
Current regulator
0.2 µF
150
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
I
G
S09-0011-Rev. A, 19-Jan-09
Document Number: 91165
D.U.T.
I
D
+
-
V
DS