SUM110N10-09-E3 Vishay, SUM110N10-09-E3 Datasheet

MOSFET N-CH 100V 110A D2PAK

SUM110N10-09-E3

Manufacturer Part Number
SUM110N10-09-E3
Description
MOSFET N-CH 100V 110A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM110N10-09-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.5 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
6700pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0095 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
110A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
9.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM110N10-09-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM110N10-09-E3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SUM110N10-09-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SUM110N10-09-E3
Quantity:
70 000
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 70677
S10-0644-Rev. G, 22-Mar-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
DS
100
Ordering Information: SUM110N10-09-E3 (Lead (Pb)-free)
(V)
0.0095 at V
G
Top View
TO-263
R
N-Channel 100 V (D-S) 175 °C MOSFET
DS(on)
J
b
b
D
= 175 °C)
S
GS
(Ω)
= 10 V
PCB Mount (TO-263)
C
= 25 °C, unless otherwise noted
I
T
110
D
L = 0.1 mH
T
T
T
C
C
C
A
(A)
= 125 °C
= 25 °C
= 25 °C
= 25 °C
a
d
FEATURES
• TrenchFET
• New Package with Low Thermal Resistance
• 100 % R
Symbol
Symbol
T
R
J
R
V
V
E
I
g
I
P
, T
DM
I
AR
thJA
thJC
GS
DS
AR
D
D
Tested
®
stg
Power MOSFET
G
N-Channel MOSFET
- 55 to 175
D
S
Limit
Limit
SUM110N10-09
± 20
110
375
3.75
100
440
280
87
0.4
75
40
a
a
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SUM110N10-09-E3

SUM110N10-09-E3 Summary of contents

Page 1

... R (Ω) DS DS(on) 100 0.0095 TO-263 Top View Ordering Information: SUM110N10-09-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM110N10-09 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... DS Capacitance Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 250 6 V 200 150 100 0.015 °C C 0.012 25 °C 0.009 125 °C 0.006 0.003 0.000 80 100 120 75 100 SUM110N10-09 Vishay Siliconix T = 125 ° °C 25 ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current ...

Page 4

... SUM110N10-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 2.5 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 75 100 125 150 175 I ( ° 0.01 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70677. Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 1000 100 125 150 175 -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N10-09 Vishay Siliconix 10 µs 100 100 µs Limited by R DS(on 100 ms ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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