IRFP254 Vishay, IRFP254 Datasheet - Page 5
![MOSFET N-CH 250V 23A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP254
Manufacturer Part Number
IRFP254
Description
MOSFET N-CH 250V 23A TO-247AC
Manufacturer
Vishay
Datasheet
1.IRFP254.pdf
(8 pages)
Specifications of IRFP254
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
2700pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP254
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP254
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFP254A
Manufacturer:
SAMSUNG
Quantity:
194
Part Number:
IRFP254A
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
IRFP254N
Manufacturer:
IR
Quantity:
12 500
Document Number: 91214
S-81304-Rev. A, 16-Jun-08
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
AS
R
10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
0.01 Ω
L
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
IRFP254, SiHFP254
DS
t
r
t
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
V
+
-
www.vishay.com
DD
V
DD
5