IRFP340 Vishay, IRFP340 Datasheet

MOSFET N-CH 400V 11A TO-247AC

IRFP340

Manufacturer Part Number
IRFP340
Description
MOSFET N-CH 400V 11A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP340

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP340

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91222
S11-0448-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-247AC
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 11 A, dI/dt ≤ 120 A/μs, V
= 50 V, starting T
(Ω)
D
a
J
= 25 °C, L = 6.9 mH, R
c
a
a
b
DD
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
400
62
10
30
This datasheet is subject to change without notice.
g
= 25 Ω, I
D
S
C
= 25 °C, unless otherwise noted)
Power MOSFET
0.55
V
GS
AS
6-32 or M3 screw
at 10 V
= 11 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247AC
IRFP340PbF
SiHFP340-E3
IRFP340
SiHFP340
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
TO-247AC
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
design,
IRFP340, SiHFP340
package
- 55 to + 150
LIMIT
300
± 20
400
480
150
6.9
1.2
4.0
1.1
11
44
11
15
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
is
on-resistance
preferred
www.vishay.com
lbf · in
RoHS*
UNIT
W/°C
N · m
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
and
for
1

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IRFP340 Summary of contents

Page 1

... C SYMBOL ° 100 ° °C C dV/ for screw = 25 Ω (see fig. 12 ≤ 150 °C. This datasheet is subject to change without notice. IRFP340, SiHFP340 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance package is preferred LIMIT UNIT V 400 ± 6 ...

Page 2

... IRFP340, SiHFP340 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Document Number: 91222 S11-0448-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFP340, SiHFP340 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

Page 4

... IRFP340, SiHFP340 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

Page 5

... Document Number: 91222 S11-0448-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFP340, SiHFP340 Vishay Siliconix D.U. ...

Page 6

... IRFP340, SiHFP340 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... D • D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRFP340, SiHFP340 Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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