IRFP360 Vishay, IRFP360 Datasheet - Page 2

• Manufacturer Part Number: IRFP360
• Description: MOSFET N-CH 400V 23A TO-247AC
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFP360

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP360

IRFP360, SiHFP360
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
R
t
t
R
R
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
V
V
V
R
GS
GS
= 25 °C, I
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
T
Reference to 25 °C, I
J
= 4.3 Ω, R
= 320 V, V
= 10 V
= 10 V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
0.24
TEST CONDITIONS
DS
DS
GS
DS
-
-
= 200 V, I
= 400 V, V
F
= V
= 0 V, I
= 50 V, I
V
V
= 23 A, dI/dt = 100 A/μs
GS
V
DS
D
S
GS
GS
GS
= 8.3 Ω, see fig. 10
= 23 A, V
= ± 20 V
I
D
, I
= 25 V,
= 0 V,
= 0 V, T
D
= 23 A, V
D
see fig. 6 and 13
D
= 250 μA
D
= 250 μA
GS
= 14 A
= 23 A ,
I
D
D
= 0 V
= 14 A
GS
J
= 1 mA
G
= 125 °C
G
DS
b
= 0 V
= 320 V,
b
b
MAX.
D
S
S
0.45
D
b
40
b
-
b
MIN.
400
2.0
14
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0447-Rev. B, 14-Mar-11
www.vishay.com/doc?91000
Document Number: 90292
TYP.
4500
1100
0.56
490
100
420
5.0
5.6
18
79
67
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.20
250
210
110
630
4.0
1.8
8.4
S
25
30
23
92
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns
Ω
V
V
S
A
V