IRFP23N50L Vishay, IRFP23N50L Datasheet - Page 9

• Manufacturer Part Number: IRFP23N50L
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP23N50L

www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Y6HQG )
UCDTÃDTÃ6IÃDSAQ "Ã
XDUCÃ6TT H7G`Ã
GPUÃ8P9 Ã$%$&
6TT H7G 9ÃPIÃXXÃ"$Ã!
DIÃUC Ã6TT H7G`ÃGDI ÃÅCÅ
Note: "P" in assembly line
position indicates "Lead-Free"
This product has been designed and qualified for the Industrial market.
Visit us at www.irf.com for sales contact information.07/04
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
DIU SI6UDPI6G
S 8UDAD S
6TT H7G`
GPUÃ8P9
GPBP
$%
5)3(
"$C
$&
Q6SUÃIVH7 S
TAC Fax: [phone]
96U Ã8P9
` 6SÃÃ2Ã!
X FÃ"$
GDI ÃC
9