IRFP32N50KPBF Vishay, IRFP32N50KPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP32N50KPBF
• Description: MOSFET N-CH 500V 32A TO-247AC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFP32N50KPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 5280pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 32 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.16Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Drain Current (max): 32A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP32N50KPBF

Diode Characteristics
Static @ T
Dynamic @ T
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Document Number: 91221
‚
ƒ
Notes:
I
I
Symbol
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
Symbol
I
I
V
t
Q
I
t
DSS
GSS
d(on)
d(off)
SM
r
f
S
rr
RRM
on
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
(BR)DSS
T
max. junction temperature.
Starting T
SD
I
AS
J
eff.
≤ 150°C
≤ 32A, di/dt ≤ 197A/µs, V
= 32A,
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
= 25°C, L = 0.87mH, R
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
DD
≤ V
G
(BR)DSS
= 25Ω,
,
„
…
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
as C
500
–––
––– 0.135 0.16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
14
–––
–––
–––
–––
–––
–––
oss
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
5280 –––
5630 –––
0.54 –––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
120
550
155
265
–––
–––
–––
530
while V
9.0
28
48
54
45
30
–––
250
100
13.5
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
130
800
–––
5.0
1.5
50
59
84
32
DS
is rising from 0 to 80% V
V/°C
µA
µA
nA
nC
ns
µC
pF
ns
V
Ω
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 32A
= 32A
= 25°C, I
= 25°C, I
= 4.3Ω
= V
= 500V, V
= 400V, V
= 0V, I
= 10V, I
= 30V
= -30V
= 50V, I
= 400V
= 10V „
= 250V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
D
DS
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 32A, V
= 32A
= 250µA
= 32A
= 32A
GS
GS
DSS
= 0V to 400V …
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
= 0V
= 0V, T
.
D
www.vishay.com
= 1mA†
GS
„
J
= 0V „
G
= 150°C
S
+L
D
S
D
)
2