IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet - Page 7
![MOSFET N-CH 500V 46A SUPER247](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFPS40N50LPBF
Manufacturer Part Number
IRFPS40N50LPBF
Description
MOSFET N-CH 500V 46A SUPER247
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets
1.IRFPS40N50LPBF.pdf
(9 pages)
2.IRFPS40N50LPBF.pdf
(8 pages)
3.IRFPS40N50LPBF.pdf
(9 pages)
Specifications of IRFPS40N50LPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
8110pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
Super-247
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
46 A
Power Dissipation
540000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
46A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
Super-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFPS40N50LPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPS40N50LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91260.
Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
-
+
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
IRFPS40N50L, SiHFPS40N50L
D =
-
g
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7