PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN9R5-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 211W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 89A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.6 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064327127

NXP Semiconductors
PSMN9R5-100PS
Product data sheet
Fig 3.
(A)
I
D
10
10
10
10
−1
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
DC
Rev. 03 — 28 October 2010
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
10
2
t
1 ms
100 ms
10 ms
p
100 μs
= 10 μs
PSMN9R5-100PS
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
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