PSMN015-110P,127 NXP Semiconductors, PSMN015-110P,127 Datasheet
PSMN015-110P,127
Specifications of PSMN015-110P,127
Available stocks
Related parts for PSMN015-110P,127
PSMN015-110P,127 Summary of contents
Page 1
... Table 1: Pinning - SOT78, simplified outlines and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) PSMN015-110P TrenchMOS™ Standard level FET Rev. 01 — 08 January 2004 Low on-state resistance DC-to-DC converters V 110 300 W tot Simplified outline ...
Page 2
... T 175 175 100 pulsed Figure pulsed unclamped inductive load 0.11 ms starting T GS Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET Min - = Figure 2 and 3 - Figure Figure © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Version Max Unit 110 V 110 ...
Page 3
... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 12544 Product data 03aa16 120 I der (%) 80 40 150 200 der Fig 2. Normalized continuous drain current Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET 100 150 ------------------- = 100 function of mounting base temperature 100 ...
Page 4
... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 12544 Product data Conditions Figure 4 vertical in still air Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET Min Typ Max Unit - - 0 03am52 ...
Page 5
... Figure 175 100 175 Figure 7 and 175 MHz 1 5 Figure /dt = 100 Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET Min Typ Max 110 - - 4 500 - 2 100 32.4 40.5 Figure Figure 11 - 4900 - - 390 - - 220 - - 0.8 1 115 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
Page 6
... 4.8 V 4 4 (V) Fig 6. Transfer characteristics: drain current as a 03am55 5.2 V 5 (A) Fig 8. Normalized drain-source on-state resistance Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET > DSon 175 and 175 DSon function of gate-source voltage; typical values. ...
Page 7
... Product data 03aa32 ( 120 180 Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET min typ max ( gate-source voltage. 03am58 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 03aa35 ...
Page 8
... Product data 03am57 ( 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET (nC and © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 03am59 100 ...
Page 9
... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
Page 10
... Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20040108 HZG463a Product data (9397 750 12544) 9397 750 12544 Product data Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 11
... SiliconMAX — trademark of Koninklijke Philips Electronics N.V. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 08 January 2004 Rev. 01 — 08 January 2004 PSMN015-110P PSMN015-110P TrenchMOS™ Standard level FET TrenchMOS™ Standard level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
Page 12
... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 08 January 2004 Document order number: 9397 750 12544 PSMN015-110P TrenchMOS™ Standard level FET ...