PSMN005-75B,118 NXP Semiconductors, PSMN005-75B,118 Datasheet - Page 4
![MOSFET N-CH 75V 75A D2PAK](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
PSMN005-75B,118
Manufacturer Part Number
PSMN005-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN005-75B118.pdf
(13 pages)
Specifications of PSMN005-75B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
230W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
165nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
230000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057043118::PSMN005-75B /T3::PSMN005-75B /T3
NXP Semiconductors
PSMN005-75B_1
Product data sheet
Fig 3.
(A)
I
10
10
D
10
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
Rev. 01 — 16 November 2009
DC
N-channel TrenchMOS SiliconMAX standard level FET
10
V
DS
PSMN005-75B
(V)
© NXP B.V. 2009. All rights reserved.
t
p
=
100 μ s
1 ms
10 ms
0.1 s
03ah91
10 μ s
10
2
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