IRLML2502TRPBF International Rectifier, IRLML2502TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLML2502TRPBF
• Description: MOSFET N-CH 20V 4.2A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2502TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Channel Type: N
• Current, Drain: 4.2 A
• Gate Charge, Total: 8 nC
• Package Type: Micro3
• Polarization: N-Channel
• Power Dissipation: 1.25 W
• Resistance, Drain To Source On: 0.045 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 54 ns
• Time, Turn-on Delay: 7.5 ns
• Transconductance, Forward: 5.8 S
• Voltage, Breakdown, Drain To Source: 20 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±12 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.2 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML2502PBFTR

Fig 11. On-Resistance Vs. Gate Voltage
6
0.05
0.04
0.03
0.02
2.0
2.5 3.0
V GS, Gate -to -Source Voltage ( V )
3.5
4.0
4.5
5.0
Id = 4.0A
5.5
6.0
6.5
7.0
Fig 12. On-Resistance Vs. Drain Current
0.30
0.20
0.10
0.00
0
VGS = 2.5V
10
i D , Drain Current ( A )
20
VGS = 4.5V
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