IRF6217TRPBF International Rectifier, IRF6217TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF6217TRPBF
• Description: MOSFET P-CH 150V 0.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6217TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 700mA
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 420mA, 10V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 0.7 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
IRF6217
A S
Fig 15a&b. Unclamped Inductive Test circuit
6
12V
Fig 14a&b. Basic Gate Charge Test Circuit
V
1.94
1.94
1.92
1.92
1.90
1.90
1.88
1.88
1.86
1.86
1.84
1.84
1.82
1.82
1.80
1.80
GS
Fig 12. On-Resistance Vs. Drain Current
Same Type as D.U.T.
Current Regulator
0.00
.2 F
t p
50K
-3mA
Current Sampling Resistors
.3 F
0.25
I
G
V
(BR)DSS
D.U.T.
and Waveforms
V GS = -10V
and Waveform
I
-I D , Drain Current (A)
D
0.50
+
-
V
DS
-V
R
-20V
G
V
0.75
GS
D S
t p
V
G
I A S
Q
D .U .T
1.00
GS
0 .01
L
Charge
Q
Q
GD
G
1.25
D R IV E R
1.50
15V
V D D
A
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
Fig 13. On-Resistance Vs. Gate Voltage
35
30
25
20
15
10
5
0
4.5
25
Fig 15c. Maximum Avalanche Energy
Starting Tj, Junction Temperature
6.0
-V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
7.5
I D = -0.7A
75
9.0
10.5
100

TOP
BOTTOM
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12.0
( C)
°
125
13.5
-0.6A
-1.1A
-1.4A
I D
15.0
150