IRFL4310PBF International Rectifier, IRFL4310PBF Datasheet

IRFL4310PBF

Manufacturer Part Number

IRFL4310PBF

Description

MOSFET N-CH 100V 1.6A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRFL4310TRPBF.pdf (9 pages)

2.IRFL4310PBF.pdf (4 pages)

Specifications of IRFL4310PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

200 mOhm @ 1.6A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

1.6A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

25nC @ 10V

Input Capacitance (ciss) @ Vds

330pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current, Drain

1.6 A

Gate Charge, Total

17 nC

Package Type

SOT-223

Polarization

N-Channel

Power Dissipation

1 W

Resistance, Drain To Source On

0.2 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

34 ns

Time, Turn-on Delay

7.8 ns

Transconductance, Forward

1.5 S

Voltage, Breakdown, Drain To Source

100 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.2Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Continuous Drain Current

2.2A

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Configuration

Single Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.2 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

20 ns

Gate Charge Qg

17 nC

Minimum Operating Temperature

- 55 C

Rise Time

18 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFL4310PBF

Current page: 1 of 9
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l Surface Mount

l Dynamic dv/dt Rating

l Fast Switching

l Ease of Paralleling

l Advanced Process Technology

l Ultra Low On-Resistance

l Lead-Free

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

Description

Absolute Maximum Ratings

HEXFET

dv/dt

θJA

@ T

STG

= 25°C

= 70°C

= 25°C

Power MOSFET

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

IRFL4310PbF

-55 to + 150

S O T -2 2 3

Max.

0.10

± 20

2.2

1.6

1.3

2.1

1.0

8.3

5.0

1.6

Max.

120

DS(on)

DSS

= 1.6A

= 100V

= 0.20Ω

PD - 95144

mW/°C

Units

°C/W

V/ns

°C

04/22/04

Related parts for IRFL4310PBF

IRFL4310PBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Amb. (PCB Mount, steady state)* θJA R Junction-to-Amb. (PCB Mount, steady state)** θJA * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com IRFL4310PbF 10V 10V 10V 150 Typ ...

Page 2

... IRFL4310PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... IRFL4310PbF 3 ...

Page 4

... IRFL4310PbF 4 www.irf.com ...

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... IRFL4310PbF 5 ...

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... IRFL4310PbF 6 www.irf.com ...

Page 7

... IRFL4310PbF 7 ...

Page 8

... IRFL4310PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information PRODUCT MARKING T HIS IS AN IRF L014 INT E RNAT IONAL F L014 OGO 8 PAR T NUMB E R 314P DAT E CODE (YYWW IGNAT AD PRODUCT (OPT IONAL CODE AXXXX CODE www.irf.com ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com (. (. (. (. .55 (. .45 (. .10 (. .90 (. 2 1 5.40 (. 1. Data and specifications subject to change without notice. Visit us at www.irf.com for sales contact information. 04/04 IRFL4310PbF (. (. 6.30 (. .60 (. 5.70 (. .40 (. .60 (. .50 (. 2 2 ...

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