IRF9333PBF International Rectifier, IRF9333PBF Datasheet - Page 5
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IRF9333PBF
Manufacturer Part Number
IRF9333PBF
Description
MOSFET P-CH 30V 9.2A SO-8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9333TRPBF.pdf
(8 pages)
Specifications of IRF9333PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19.4 mOhm @ 9.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
15.6mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
32.5 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 9.2 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9333PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
60
50
40
30
20
10
420
360
300
240
180
120
+
Fig 12. On-Resistance vs. Gate Voltage
-
60
0
2
25
D.U.T
T J = 25°C
4
Starting T J , Junction Temperature (°C)
Fig 17.
-V GS, Gate -to -Source Voltage (V)
*
50
6
+
-
•
•
•
•
8
SD
75
10
•
•
•
12
100
-
14
TOP
BOTTOM -7.5A
G
T J = 125°C
I D = -9.4A
16
+
125
I D
-2.1A
-3.0A
18
20
+
150
-
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
1000
800
600
400
200
P.W.
80
70
60
50
40
30
20
10
SD
0
DS
1E-5
Waveform
Waveform
0
Fig 16. Typical Power vs. Time
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
10
1E-4
Diode Recovery
Current
20
-I D , Drain Current (A)
dv/dt
Forward Drop
di/dt
1E-3
Time (sec)
®
30
Power MOSFETs
D =
V GS = -4.5V
40
1E-2
Period
P.W.
V GS = -10V
50
1E-1
V
V
I
SD
GS
DD
60
=10V
1E+0
70
5