IRF9410TRPBF International Rectifier, IRF9410TRPBF Datasheet - Page 5
![MOSFET N-CH 30V 7A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF9410TRPBF
Manufacturer Part Number
IRF9410TRPBF
Description
MOSFET N-CH 30V 7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9410TRPBF.pdf
(7 pages)
Specifications of IRF9410TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Details
Other names
IRF9410PBFTR
IRF9410TRPBF
IRF9410TRPBFTR
IRF9410TRPBF
IRF9410TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9410TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
100
1000
0.1
10
0.00001
800
600
400
200
1
0
1
0.50
0.20
0.10
0.05
0.02
0.01
V
DS
V
C
C
C
, Drain-to-Source Voltage (V)
(THERMAL RESPONSE)
0.0001
GS
iss
rss
oss
SINGLE PULSE
= 0V,
= C
= C
= C
C
C
C
rss
iss
oss
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.001
ds
SHORTED
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
20
16
12
8
4
0
0.1
0
I =
D
2.0A
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
6
G
1
J
12
DM
x Z
1
thJA
V
P
2
18
DM
DS
+ T
10
= 15V
A
t
1
t
24
2
5
100
30