IRF7207PBF International Rectifier, IRF7207PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7207PBF
• Description: MOSFET P-CH 20V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7207PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
400
300
200
100
0
25
0.1
Fig 10. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
1. Duty factor D = t / t
2. Peak T = P
Notes:
Vs. Drain Current
J
1
J
75
DM
x Z
1
thJA
100
P
2
DM
+ T
TOP
BOTTOM
10
A
t
1
125
t
2
-2.4A
-4.3A
-5.4A
°
I D
5
100
150