IRFL4315PBF International Rectifier, IRFL4315PBF Datasheet - Page 6

• Manufacturer Part Number: IRFL4315PBF
• Description: MOSFET N-CH 150V 2.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4315PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Channel Type: N
• Current, Drain: 2.6 A
• Gate Charge, Total: 12 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 2.8 W
• Resistance, Drain To Source On: 185 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 8.4 ns
• Transconductance, Forward: 3.5 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 185 m Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 19 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 21 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFL4315PbF
I
AS
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
240
220
200
180
160
140
120
100
.2 F
50K
3mA
t p
Current Sampling Resistors
0
.3 F
I
G
V
(BR)DSS
D.U.T.
I
D
and Waveforms
5
and Waveform
V GS = 10V
+
-
V
I D , Drain Current (A)
DS
V
10
R G
GS
20V
V DS
t p
V
G
Q
I AS
15
GS
D.U.T
0.01
L
Charge
Q
Q
GD
G
20
15V
DRIVER
+
-
25
V DD
A
4000
3500
3000
2500
2000
1500
1000
Fig 13. On-Resistance Vs. Gate Voltage
100
500
80
60
40
20
0
0
25
Fig 15c. Maximum Avalanche Energy
4.5
Starting Tj, Junction Temperature
6.0
V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
7.5
I D = 2.6A
75
9.0
10.5
100
TOP
BOTTOM
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12.0
( C)
°
125
13.5
1.4A
2.5A
3.1A
I D
15.0
150