IRLL2705TRPBF International Rectifier, IRLL2705TRPBF Datasheet - Page 4

MOSFET N-CH 55V 3.8A SOT223

IRLL2705TRPBF

Manufacturer Part Number
IRLL2705TRPBF
Description
MOSFET N-CH 55V 3.8A SOT223
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRLL2705TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
870pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.04Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±16V
Drain Current (max)
5.2A
Power Dissipation
2.1W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
3.8 A
Mounting Style
SMD/SMT
Gate Charge Qg
32 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLL2705PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLL2705TRPBF
Manufacturer:
International Rectifier
Quantity:
50 619
Part Number:
IRLL2705TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLL2705TRPBF
Quantity:
4 800
Company:
Part Number:
IRLL2705TRPBF
Quantity:
50 000
4
1400
1200
1000
100
800
600
400
200
10
1
0
0.4
1
C
C
C
V
rss
oss
V
iss
SD
0.6
DS
T = 150°C
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
J
GS
iss
rss
oss
= 0V,
= C
= C
= C
0.8
gs
gd
ds
+ C
+ C
10
T = 25°C
gd
gd
J
f = 1MHz
1.0
, C
ds
SHORTED
1.2
V
GS
= 0V
100
1.4
A
A
100
0.1
10
20
16
12
1
8
4
0
0.1
0
I
T
T
Single Pulse
D
A
J
= 3.8A
= 25°C
= 150°C
OPERATION IN THIS AREA LIMITED
V
DS
10
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
1
20
BY R
V
V
DS(on)
DS
DS
= 44V
= 28V
FOR TEST CIRCUIT
30
SEE FIGURE 9
10
www.irf.com
40
100µs
10ms
10µs
1ms
100
50
A
A

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