IRFR220NTRLPBF International Rectifier, IRFR220NTRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRFR220NTRLPBF
• Description: MOSFET N-CH 200V 5A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR220NTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 43W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 43 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
Fig 14. For N-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
®
D =
-
Power MOSFETs
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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