IRF5803D2PBF International Rectifier, IRF5803D2PBF Datasheet

MOSFET P-CH 40V 3.4A 8-SOIC

IRF5803D2PBF

Manufacturer Part Number
IRF5803D2PBF
Description
MOSFET P-CH 40V 3.4A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF5803D2PBF.pdf (11 pages)

Specifications of IRF5803D2PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
112 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
190 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 3.4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
50 ns
Gate Charge Qg
25 nC
Minimum Operating Temperature
- 55 C
Rise Time
550 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
l
l
l
l
l
Description
Thermal Resistance
The FETKY
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (T
Notes:

‚
ƒ
Symbol
R
R
R
www.irf.com
I
I
I
P
P
V
T
θJL
θJA
D
D
DM
θJA
Low V
D
D
GS
J,
Surface mounted on 1 inch square copper board, t ≤ 10sec.
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET®
SO-8 Footprint
Lead-Free
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width ≤ 400µs – duty cycle ≤ 2%
@ T
@ T
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
F
TM
Schottky Rectifier
family of Co-packaged HEXFETs and
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient ƒ, MOSFET
Junction-to-Ambient ƒ, SCHOTTKY
Parameter
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current À
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
A
= 25°C Unless Otherwise Noted)
and
GS
GS
@ -10V
@ -10V
A
S
G
A
FETKY MOSFET & Schottky Diode
1
2
3
4
Top View
IRF5803D2PbF
Typ.
–––
–––
–––
8
7
6
5
-55 to +150
Maximum
± 20
-3.4
-2.7
K
-27
2.0
1.3
K
D
D
16
Schottky Vf = 0.51V
R
DS(on)
V
Max.
62.5
62.5
DSS
20
SO-8
PD- 95160A
= 112mΩ
= -40V
mW/°C
Units
Units
°C/W
°C
W
A
V
1

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IRF5803D2PBF Summary of contents

Page 1

... Notes:  Repetitive rating – pulse width limited by max. junction temperature (see fig. 11) ‚ Pulse width ≤ 400µs – duty cycle ≤ 2% ƒ Surface mounted on 1 inch square copper board, t ≤ 10sec. www.irf.com IRF5803D2PbF FETKY MOSFET & Schottky Diode ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C -2.7V 0.01 0 Drain-to-Source Voltage (V) 100 ° 20µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 -V ...

Page 4

Power Mosfet Characteristics 2000 0V 100 KHZ C iss = SHORTED C rss = C gd 1500 C oss = Ciss 1000 500 Coss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE ...

Page 6

Power Mosfet Characteristics 0.20 0.15 0. -3.4A 0.05 0.00 4.0 8.0 12.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. ...

Page 7

-250µA 2.4 2.0 1.6 -75 -50 - Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com Power Mosfet Characteristics 0.001 ...

Page 8

Schottky Diode Characteristics 100 T = 150° 125° 25° 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage Drop - V Fig Maximum Forward Voltage Drop ...

Page 9

Schottky Diode Characteristics 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 0.0001 Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 160 140 120 100 ...

Page 10

SO-8 (Fetky) Package Outline 0.25 [.010 0.25 [.010 NOT ES: 1. DIMENS IONING & T OLERANCING PER ...

Page 11

SO-8 (Fetky) Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. NOTES ...

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