IRLR3410TRLPBF International Rectifier, IRLR3410TRLPBF Datasheet - Page 4
![MOSFET N-CH 100V 17A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRLR3410TRLPBF
Manufacturer Part Number
IRLR3410TRLPBF
Description
MOSFET N-CH 100V 17A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRLR3410TRPBF.pdf
(11 pages)
Specifications of IRLR3410TRLPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 5V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
155 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
15 A
Power Dissipation
52 W
Mounting Style
SMD/SMT
Gate Charge Qg
22.7 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.105Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRLR/U3410PbF
4
1400
1200
1000
100
800
600
400
200
10
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
C
C
C
V
V
Drain-to-Source Voltage
oss
iss
rss
SD
0.6
DS
Forward Voltage
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
T = 175°C
GS
iss
rss
oss
J
= 0V,
= C
= C
= C
0.8
gs
gd
ds
+ C
+ C
10
T = 25°C
gd
J
gd
f = 1MHz
1.0
, C
ds
SHORTED
1.2
V
GS
= 0V
1.4
100
A
A
1000
100
10
15
12
Fig 8. Maximum Safe Operating Area
1
9
6
3
0
1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I
C
J
D
= 9.0A
= 25°C
= 175°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
10
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
10
V
V
V
DS
DS
DS
20
BY R
= 80V
= 50V
= 20V
DS(on)
FOR TEST CIRCUIT
30
SEE FIGURE 13
100
www.irf.com
10µs
100µs
1ms
10ms
40
1000
50
A
A