IRLR2703PBF International Rectifier, IRLR2703PBF Datasheet - Page 4

• Manufacturer Part Number: IRLR2703PBF
• Description: MOSFET N-CH 30V 23A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR2703PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 23 A
• Gate Charge, Total: 15 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 45 W
• Resistance, Drain To Source On: 0.045 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 12 ns
• Time, Turn-on Delay: 8.5 ns
• Transconductance, Forward: 6.4 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
100
1000
10
800
600
400
200
1
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 175°C
J
Drain-to-Source Voltage
V
C
C
C
V
SD
iss
oss
rss
0.8
DS
, Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25°C
J
= 0V,
= C
= C
= C
1.2
gs
gd
ds
+ C
+ C
10
gd
gd
1.6
f = 1MHz
, C
ds
2.0
SHORTED
V
GS
= 0V
2.4
100
A
A
1000
100
15
12
10
9
6
3
0
1
0
1
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
C
J
Fig 8.
= 14A
= 25°C
= 175°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
Q , Total Gate Charge (nC)
4
G
, Drain-to-Source Voltage (V)
8
BY R
V
V
10
DS
DS
DS(on)
= 24V
= 15V
FOR TEST CIRCUIT
12
SEE FIGURE 13
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10µs
100µs
1ms
10ms
16
100
20
A
A