IRF7406PBF International Rectifier, IRF7406PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7406PBF
• Description: MOSFET P-CH 30V 5.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7406PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.045Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 5.8A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
100
0.1
2500
2000
1500
1000
10
500
1
0.3
0
1
T = 150°C
J
-V
-V
SD
C
C
DS
C
oss
iss
rss
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.6
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.9
ds
SHORTED
V
GS
= 0V
1.2
100
A
A
20
16
12
100
8
4
0
10
1
0
0.1
I
V
D
DS
T
T
Single Pulse
A
J
= -2.8A
= 25 C
= 150 C
= -24V
OPERATION IN THIS AREA LIMITED
-V
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 12
40
www.irf.com
10
100us
1ms
10ms
60
100
A