IRF7406PBF International Rectifier, IRF7406PBF Datasheet - Page 4
![MOSFET P-CH 30V 5.8A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7406PBF
Manufacturer Part Number
IRF7406PBF
Description
MOSFET P-CH 30V 5.8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF7406TRPBF.pdf
(9 pages)
Specifications of IRF7406PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.045Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
5.8A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7406PBF
Manufacturer:
ST
Quantity:
1 400
4
100
0.1
2500
2000
1500
1000
10
500
1
0.3
0
1
T = 150°C
J
-V
-V
SD
C
C
DS
C
oss
iss
rss
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.6
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.9
ds
SHORTED
V
GS
= 0V
1.2
100
A
A
20
16
12
100
8
4
0
10
1
0
0.1
I
V
D
DS
T
T
Single Pulse
A
J
= -2.8A
= 25 C
= 150 C
= -24V
OPERATION IN THIS AREA LIMITED
-V
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 12
40
www.irf.com
10
100us
1ms
10ms
60
100
A