IRFR9N20DTRLPBF International Rectifier, IRFR9N20DTRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR9N20DTRLPBF
• Description: MOSFET N-CH 200V 9.4A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR9N20DTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 25V
• Power - Max: 86W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9.4A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 380mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9.4 A
• Power Dissipation: 86 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
10000
1000
100
100
0.1
10
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 175 C
J
V
0.4
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6
10
Coss
Crss
Ciss
0.8
T = 25 C
J
f = 1 MHZ
100
1.0
°
V
SHORTED
GS
1.2
= 0 V
1000
1.4
1000
100
0.1
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
5.6A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
5
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
10
BY R
V
V
V
DS
DS
DS
15
DS(on)
= 160V
= 100V
= 40V
FOR TEST CIRCUIT
SEE FIGURE
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100
20
10us
100us
1ms
10ms
25
13
1000
30