IRLR120NPBF International Rectifier, IRLR120NPBF Datasheet - Page 6

• Manufacturer Part Number: IRLR120NPBF
• Description: MOSFET N-CH 100V 10A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR120NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 185 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 265 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 22 ns
• Gate Charge Qg: 13.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U120NPbF
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
10V
V DS
Q
GS
t p
I AS
D.U.T
t p
0.01 Ω
L
Q
Charge
Q
GD
G
15V
V
(BR)DSS
DRIVER
+
-
V DD
A
200
160
120
80
40
0
12V
Fig 12c. Maximum Avalanche Energy
25
Fig 13b. Gate Charge Test Circuit
V
GS
Starting T , Junction Temperature (°C)
Same Type as D.U.T.
Current Regulator
50
.2µF
Vs. Drain Current
50KΩ
3mA
J
Current Sampling Resistors
75
.3µF
I
G
100
D.U.T.
125
I
D
TOP
BOTTOM
www.irf.com
+
-
150
V
DS
4.2A
2.4A
6.0A
I
D
175
A