IRF7807VD2TRPBF International Rectifier, IRF7807VD2TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7807VD2TRPBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807VD2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7807VD2PBFTR; IRF7807VD2TRPBF; IRF7807VD2TRPBFTR

Fig 7. Typical Reverse Output Characteristics
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70
60
50
40
30
20
10
2.0
1.5
1.0
0.5
0.0
0
-60 -40 -20
0
Fig 5. Normalized On-Resistance
I =
D
TOP
BOTTOM 0.0V
7.0A
V SD , Source-to-Drain Voltage (V)
T , Junction Temperature ( C)
0.2
J
Vs. Temperature
VGS
4.5V
0
3.5V
3.0V
2.5V
2.0V
20 40 60 80 100 120 140 160
0.4
380µs PULSE WIDTH
Tj = 25°C
0.6
V
0.0 V
°
GS
0.8
=
4.5V
1
0.030
0.025
0.020
0.015
0.010
Fig 8. Typical Reverse Output Characteristics
70
60
50
40
30
20
10
0
2.0
Fig 7. On-Resistance Vs. Gate Voltage
0
TOP
BOTTOM 0.0V
4.0
V GS, Gate -to -Source Voltage (V)
IRF7807VD2PbF
V SD , Source-to-Drain Voltage (V)
0.2
6.0
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
0.4
8.0
I D = 7.0A
380µS PULSE WIDTH
Tj = 150°C
10.0
0.6
O.OV
12.0
0.8
14.0
16.0
5
1