IRFR5305TRPBF International Rectifier, IRFR5305TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR5305TRPBF
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFR5305TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 31A
• Power Dissipation: 110W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Channel Type: P
• Current, Drain: -31 A
• Gate Charge, Total: 63 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.065 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 8 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Continuous Drain Current: 31A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR5305PBFTR

IRFR/U5305PbF
ƒ
** Uses typical socket mount.
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

‚
* When mounted on 1" square PCB (FR-4 or G-10 Material).
Notes:
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
For recommended footprint and soldering techniques refer to application note #AN-994.
DSS
GSS
d(on)
r
d(off)
f
SM
rr
S
fs
D
S
2
(BR)DSS
GS(th)
iss
rss
DS(on)
g
gs
gd
oss
SD
rr
Repetitive rating; pulse width limited by
I
T
max. junction temperature. (See Fig. 11)
V
(BR)DSS
R
SD
J
DD
G
≤ 175 C
≤ -16A, di/dt ≤ -280A/ s, V
= 25Ω I
= -25V, starting T
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
AS
= -16A. (See Figure 12)
J
= 25 C, L = 2.1mH
Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
… This is applied for I-PAK, L
„
† Uses IRF5305 data and test conditions.
lead and center of die contact.
Pulse width ≤ 300 s; duty cycle ≤ 2%.
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
-55
8.0
Min. Typ. Max. Units
–––
–––
–––
–––
–––
-0.034 –––
1200 –––
–––
––– 0.065
–––
–––
–––
–––
–––
–––
–––
–––
–––
520
250
–––
–––
170
4.5
14
66
39
63
71
-250
-100
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
-110
-1.3
–––
110
250
-25
63
13
29
V/ C
nH
µA
nA
nC
ns
pF
nC
ns
Ω
V
V
S
V
S
of D-PAK is measured between
V
Reference to 25 C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact …
V
V
ƒ = 1.0MHz, See Fig. 5 †
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs „†
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -16A
= -16A
= 25°C, I
= 25°C, I
= 1.6Ω, See Fig. 10 „†
= 6.8Ω
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -44V
= -10V, See Fig. 6 and 13 „†
= -28V
= -25V
= 0V
GS
, I
D
F
S
D
Conditions
= -250 A
D
D
Conditions
= -16A
= -16A, V
GS
GS
= -250 A
= -16A†
= -16A „
= 0V, T
= 0V
D
= -1mA
GS
J
G
= 150 C
= 0V „
G
D
S
S
D