IRFR5305TRPBF International Rectifier, IRFR5305TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRFR5305TRPBF
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFR5305TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 31A
• Power Dissipation: 110W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Channel Type: P
• Current, Drain: -31 A
• Gate Charge, Total: 63 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.065 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 8 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Continuous Drain Current: 31A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR5305PBFTR

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V
GS
*
Re-Applied
Voltage
Reverse
Recovery
Current

*
** Use P-Channel Driver for P-Channel Measurements
Reverse Polarity for P-Channel
‚
+
-
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
**
Body Diode Forward
+
-
ƒ
• dv/dt controlled by R
• I
• D.U.T. - Device Under Test
SD
Diode Recovery
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
di/dt
D =
-
G
Period
„
P.W.
IRFR/U5305PbF
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
*
7