IRF7424TRPBF International Rectifier, IRF7424TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7424TRPBF
• Description: MOSFET P-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7424TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4030pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 22 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 75 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7424PBFTR; IRF7424TRPBF; IRF7424TRPBFTR

IRF7424PbF
6
0.035
0.030
0.025
0.020
0.015
0.010
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
2.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
4.0
Q
Charge
Q
GD
G
6.0
I D = -11A
8.0
10.0
0.030
0.025
0.020
0.015
0.010
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
12V
0
V
GS
Same Type as D.U.T.
V GS = -4.5V
Current Regulator
10
.2µF
Drain Current
-I D , Drain Current (A)
50KΩ
-3mA
Current Sampling Resistors
20
.3µF
I
G
30
V GS = -10V
D.U.T.
I
D
www.irf.com
40
+
-
V
DS
50
60