IRFR6215TRLPBF International Rectifier, IRFR6215TRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRFR6215TRLPBF
• Description: MOSFET P-CH 150V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR6215TRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current

*
Reverse Polarity of D.U.T for P-Channel
‚
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Waveform
Waveform
Fig 14. For N-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
• dv/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device Under Test
Diode Recovery
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
di/dt
Current Transformer
D =
-
G
Period
„
P.W.
+
V
V
I
IRFR/U6215PbF
SD
GS
DD
=10V
+
-
V
DD
7