IRLR3103PBF International Rectifier, IRLR3103PBF Datasheet - Page 2

• Manufacturer Part Number: IRLR3103PBF
• Description: MOSFET N-CH 30V 55A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3103PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 46 A
• Power Dissipation: 69 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 54 ns
• Gate Charge Qg: 33.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 210 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
‚

IRLR/U3103PbF
ƒ
Source-Drain Ratings and Characteristics
Notes:
L
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
R
I
V
∆V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
D
SM
on
S
S
rr
fs
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
V
2
rr
Repetitive rating; pulse width limited by
(BR)DSS
R
I
max. junction temperature. ( See fig. 11 )
T
SD
DD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
≤ 175°C
= 25Ω, I
≤ 34A, di/dt ≤ 140A/µs, V
= 15V, starting T
/∆T
J
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ‡
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 34A. (See Figure 12)
J
= 25°C, L = 300µH
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
„
…
†
‡
Pulse width ≤ 300µs; duty cycle ≤ 2%
Calculated continuous current based on maximum allowable junction
This is applied for I-PAK, L
Uses IRL3103 data and test conditions
temperature; Package limitation current = 20A
center of die contact
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
–––
–––
30
23
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.037 –––
1600 –––
Typ. Max. Units
–––
––– 0.019
––– 0.024
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
210
640
320
9.0
7.5
4.5
–––
–––
–––
210
20
54
81
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
55…
120
310
14
28
–––
220
25
50
1.3
V/°C Reference to 25°C, I
nC
nH
µA
nA
pF
ns
Ω
nC
V
V
S
ns
V
S
of D-PAK is measured between lead and
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact†
V
V
ƒ = 1.0MHz, See Fig. 5‡
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „†
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= 34A
= 34A
= 25°C, I
= 25°C, I
= 0.43Ω, See Fig. 10 „‡
= 3.4Ω, V
= V
= 25V, I
= 30V, V
= 18V, V
= 24V
= 15V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V, See Fig. 6 and 13 „‡
= 0V
GS
, I
D
S
F
D
D
D
D
GS
= 250µA
GS
GS
Conditions
Conditions
= 28A, V
= 34A
= 33A „
= 250µA
= 34A‡
= 25A „
= 4.5V
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V „
G
G
S
+L
D
D
S
)
S
D