IRF3704SPBF International Rectifier, IRF3704SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF3704SPBF
• Description: MOSFET N-CH 20V 77A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3704SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1996pF @ 10V
• Power - Max: 87W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 64 A
• Power Dissipation: 90 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3704SPBF

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Fig 1. Typical Output Characteristics
1000
100
1000
10
100
10
3.0
1
Fig 3. Typical Transfer Characteristics
0.1
V
4.0
GS
V DS , Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
5.0
1
J
°
20µs PULSE WIDTH
Tj = 25°C
3.5V
V
20µs PULSE WIDTH
6.0
DS
= 15V
T = 175 C
J
10
7.0
TOP
BOTTOM 3.5V
°
VGS
10.0V
8.0
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
100
1000
100
10
Fig 2. Typical Output Characteristics
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
I =
D
77A
V DS , Drain-to-Source Voltage (V)
IRF3704/S/LPbF
T , Junction Temperature ( C)
J
Vs. Temperature
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
Tj = 175°C
3.5V
10
TOP
BOTTOM 3.5V
V
°
GS
=
VGS
10.0V
10V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
100
3